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DMN2040LTS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diodes Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
-
-
-
-
19
26
8
0.7
1.2
26
36
-
1.2
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 6.0A
V GS = 2.5V, I D = 5.2A
V DS = 10V, I D = 6A
Is = 1.7A, V GS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R g
-
-
-
-
570
85
75
1.23
-
-
-
-
pF
pF
pF
?
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
5.2
0.86
1.25
5.2
13.5
19.8
6.1
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
V GS = 4.5V, V DS = 10V,
I D = 7A
V DD = 10V, V GS = 4.5V,
R L = 1.5 ? , R G = 1 ?
Notes:
5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
20
V GS = 10.0V
V GS = 4.5V
20
16
V DS = 5V
15
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
12
10
8
T A = 150°C
5
T A = 125°C
V GS = 1.5V
4
T A = 85°C
T A = 25°C
T A = -55°C
0
0
1 2 3 4
5
0
0
1 2 3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
2 of 6
www.diodes.com
October 2009
? Diodes Incorporated
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